SiC單晶的坩堝結(jié)構(gòu)及PVT生長工藝條件的改進SiC Single Crystals with Modification of Crucible Structure and Process Condition for PVT GrowthWon-Jae LEE韓國東義大學教授、釜山電力半導體研究所所長Won-JaeLEEProfessor of Dong-Eui University,Director of Busan Power Semiconductor Lab.
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