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等離子體輔助分子束外延生長AlN薄膜AlN epilayers grown by plasma assisted molecular beam epitaxy劉歡南京大學(xué)LIU HuanNanjing University

氧化鎵高導(dǎo)熱異質(zhì)集成射頻器件High Thermal Conductivity Heterogeneous Integrated RF Devices for Ga?O?葉建東南京大學(xué)教授YE JiandongProfessor of Nanjing University

28GHz氮化鎵基時間調(diào)制波束成形系統(tǒng)28GHz GaN based time modulated beamforming system黃同德南京理工大學(xué)副教授HUANG TongdeAssociate Professor of Nanjing University of Science and Technology

氮化鎵功率器件耐壓理論與電場均勻化技術(shù)研究Research on the breakdown theory and electric field homogenization technology of GaN-based Power Devices劉建華南京郵電大學(xué)博士

NiO/Ga2O3異質(zhì)結(jié)二極管中深能級陷阱和載流子輸運機(jī)制Correlation of deep-level traps and carrier transport mechanisms in NiO/Ga2O3 heterojunction diodes汪正鵬南京大學(xué)Zhengpeng WangNanjing University

氮化鎵及碳化硅紫外探測器技術(shù)與產(chǎn)業(yè)化應(yīng)用陸海鎵敏光電董事長、南京大學(xué)教授LU HaiProfessor of Nanjing University

基于HVPE-Ga2O3氮化的GaN襯底技術(shù)The preparation of GaN based on the nitridation of HVPE-Ga2O3 films修向前南京大學(xué)教授XIU Xiangqian-Professor of Nanjing university

【極智報告】南京大學(xué)陳琳：6英寸GaN襯底生長用HVPE反應(yīng)腔的三維數(shù)值模擬

南京大學(xué)教授陸海報告中介紹了寬禁帶半導(dǎo)體紫外光電探測器及其應(yīng)用進(jìn)展。介紹了基于III族氮化物半導(dǎo)體和SiC的高性能UV光電探測器的材料生長，設(shè)計和制造方面的最新工作。