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  • 湖北大學(xué)何云斌教授：
    MgO（100）上生長柱狀納米晶b-Ga2O3外延薄膜及其高靈敏度日盲探測器研究Columnar-nanodomained epitaxial b-Ga2O3 thin films on MgO(100) for solar-blind photodetectors with exceedingly high sensitivity何云斌湖北大學(xué)教授HE YunbinProfessor of Hubei University
    114100
    guansheng2023-05-19 14:23
  • 中國科學(xué)院半導(dǎo)體所研
    超寬禁帶六方氮化硼二維原子晶體及其光電器件Growth of ultra-wide band-gap two-dimensional hexagonal boron nitride for optoelectronic devices張興旺中國科學(xué)院半導(dǎo)體所研究員ZHANG XingwangProfessor of Institute of Semiconductors, Chinese Academy of Sciences
    128200
    guansheng2023-05-19 14:21
  • 北京大學(xué)工學(xué)院特聘研
    超高熱導(dǎo)率立方砷化硼和氮化硼晶體Cubic boron arsenide and boron nitride crystals with ultrahigh thermal conductivity 宋柏北京大學(xué)工學(xué)院特聘研究員SONG BaiProfessor of Peking University
    136300
    guansheng2023-05-19 14:21
  • 國家納米科學(xué)中心研究
    利用泵浦-探測瞬態(tài)反射顯微技術(shù)測定立方砷化硼的高雙極性遷移率High Ambipolar Mobility in Cubic Boron Arsenide（BAs）Revealed by Transient Reflectivity Microscopy劉新風(fēng)國家納米科學(xué)中心研究員,中科院納米標(biāo)準(zhǔn)與檢測重點(diǎn)實(shí)驗(yàn)室副主任LIU XinfengProfessor of National Nanoscience Center, Deputy director of the Key Laboratory of Standardizaiton and Characteriaziton of the Chinese Academy of Sciences
    132400
    guansheng2023-05-19 14:20
  • 中山大學(xué)佛山研究院院
    新型寬禁帶壓電半導(dǎo)體材料-Ga2O3及其在射頻諧振器中的應(yīng)用-Ga2O3: an Emerging Wide Bandgap Piezoelectric Semiconductor for Application in Radio Frequency Resonators王鋼中山大學(xué)佛山研究院院長，中山大學(xué)半導(dǎo)體照明材料及器件國家地方聯(lián)合工程實(shí)驗(yàn)室主任、教授WANG GangProfessor and Dean of Foshan Institute of Sun Yat-Sen University; Director of the National-Local Joint Engineering Laboratory of Semiconductor
    143700
    guansheng2023-05-19 14:17
  • 西安電子科技大學(xué)周弘
    氧化鎵功率器件耐壓和功率優(yōu)值的研究Research on Voltage Withstandand Power Optimum Value of Ga2O3 Power Devices張進(jìn)成西安電子科技大學(xué)副校長、教授（團(tuán)隊(duì)代講）
    138500
    guansheng2023-05-19 14:08
  • 上?？萍即髮W(xué)信息學(xué)院
    基于氮化鎵的CRM圖騰柱PFC整流器的無傳感器電流過零檢測技術(shù)王浩宇上?？萍即髮W(xué)信息學(xué)院長聘副教授、研究員WANG HaoyuAssociate Professor of ShanghaiTech University
    113600
    guansheng2023-05-19 09:09
  • 錦浪科技技術(shù)研究中心
    SiC功率器件在光伏逆變器中的應(yīng)用進(jìn)展Application progress of SiC power devices in photovoltaic inverters劉保頌錦浪科技技術(shù)研究中心總監(jiān)LIU Baosong Technical director of Ginlong Technologies co.,ltd
    131500
    guansheng2023-05-19 09:07
  • 江蘇第三代半導(dǎo)體研究
    高性能GaN-on-GaN材料與器件的外延生長High output power and bandwidth of c-plane GaN-on-GaN micro-LED for high-speed visible light communication王國斌江蘇第三代半導(dǎo)體研究院研發(fā)部負(fù)責(zé)人WANG GuobinSenior Project ManagerHead of RD Dept of Jiangsu Institute of Advanced Semiconductors
    130700
    guansheng2023-05-19 08:56
  • 武漢大學(xué)工業(yè)科學(xué)研究
    無損表征氮化鎵外延熱物性的瞬態(tài)熱反射技術(shù)Transient thermoreflectance technique for non-invasively characterizing the thermal properties of GaN epitaxial wafer袁超武漢大學(xué)工業(yè)科學(xué)研究院研究員YUAN ChaoProfessor of The Institute of Technological Sciences, Wuhan University
    121200
    guansheng2023-05-19 08:53
  • 北京大學(xué)副教授許福軍
    AlGaN基低維量子結(jié)構(gòu)外延和電導(dǎo)率調(diào)控研究Study on the epitaxy and conductivity regulation of AlGaN based low dimensional quantum structures許福軍北京大學(xué)物理學(xué)院副教授Xu Fujun - Associate Professor, Peking University
    121900
    guansheng2023-05-19 08:51
  • 中國科學(xué)院半導(dǎo)體所研
    平片藍(lán)寶石襯底上高質(zhì)量AlN材料MOCVD外延生長High quality AlN growth on flat sapphire at relative low temperature by MOCVD趙德剛中國科學(xué)院半導(dǎo)體所研究員ZHAO DegangProfesor of Institute of Semiconductors, CAS
    73200
    guansheng2023-05-18 16:19
  • 復(fù)旦大學(xué)張園覽：基于
    基于P區(qū)反序摻雜策略的高效碳化硅結(jié)勢壘肖特基二極管的研究High-Performance 1200 V/ 20 A 4H-SiC JBS Diodes with Retrograde P-Implants Strategy張園覽復(fù)旦大學(xué)Yuan-Lan ZHANGFudan University
    65600
    limit2022-05-01 20:24
  • 中科院微電子所副研究
    高可靠功率系統(tǒng)集成的發(fā)展和挑戰(zhàn)Development and Challenge of High-Reliability Power System in Packaging侯峰澤中國科學(xué)院微電子研究所系統(tǒng)封裝與集成研發(fā)中心副研究員Fengze HOUAssociate Professor、 Packaging and Integration Research and Development Center, Institute of Microelectronics of Chinese Academy of Sciences
    73200
    limit2022-05-01 20:22
  • 佛智芯微電子副總經(jīng)理
    先進(jìn)封裝大板扇出研發(fā)及功率器件封裝應(yīng)用The Research on Panel Level Fan Out Package and its Application on Power Electronics林挺宇廣東佛智芯微電子技術(shù)研究有限公司副總經(jīng)理，廣東省半導(dǎo)體智能裝備與系統(tǒng)集成創(chuàng)新中心首席科學(xué)家Tingyu LINDeputy General Manager of Guangdong FZX Microelectronics Technology Co. Ltd, Principal Scientist of CNC Equipment Cooperative Innovation Institute
    67400
    limit2022-05-01 20:20
  • 啟迪半導(dǎo)體研發(fā)總監(jiān)鈕
    第三代半導(dǎo)體碳化硅器件產(chǎn)業(yè)化關(guān)鍵技術(shù)及發(fā)展進(jìn)展The key technology and development progress of the Wide Band-gap semiconductor silicon carbide device industrialization鈕應(yīng)喜蕪湖啟迪半導(dǎo)體有限公司研發(fā)總監(jiān)NIU YingxiRD Director of Wuhu Advanced Semiconductor Manufacturing Co.,ltd
    85500
    limit2022-05-01 17:19
  • 西安電子科技大學(xué)微電
    SiC 功率MOSFET器件的可靠性研究Development trends and challenges of SiC Power MOSFET device 張藝蒙西安電子科技大學(xué)微電子學(xué)院教授Yimeng Zhang Professor of School of Microelectronics, Xidian University
    67400
    limit2022-05-01 17:18
  • 中電科四十八所半導(dǎo)體
    SiC功率器件制造工藝特點(diǎn)與核心裝備創(chuàng)新進(jìn)展Manufacturing process characteristics and key equipment development of SiC power devices鞏小亮中國電子科技集團(tuán)公司第四十八研究所 半導(dǎo)體裝備研究部副主任GONGXiaoliang Deputy director of Semiconductor equipment research department, the 48th Research Institute of China Electronics Technology Group Corporation
    70300
    limit2022-05-01 09:57
  • 中國工程院院士湯廣福
    新型電力系統(tǒng)與國家雙碳戰(zhàn)略New Power System and NationalDual-Carbon Strategy湯廣福--中國工程院院士、全球能源互聯(lián)網(wǎng)研究院院長TANG Guangfu--Academician of Chinese Academy of Engineering, President of Global Energy Interconnection Research Institute
    99900
    limit2022-01-31 13:41
  • 【視頻報(bào)告 2018】中
    中科院半導(dǎo)體研究所所長助理、研究員張韻分享了《III族氮化物基射頻HEMT、HBT與濾波器》報(bào)告，受限于鈮酸鋰聲速較低(3400-4000 m/s)，商用鈮酸鋰基聲表面波（SAW）濾波器工作頻率通常低于3 GHz，難以滿足通訊系統(tǒng)頻率不斷提升的需求，因此基于高聲速AlN薄膜(5600-6000 m/s)的高頻SAW濾波器成為研究熱點(diǎn)。分別在鈮酸鋰襯底和AlN/藍(lán)寶石襯底上制備出叉指寬度為2 靘的SAW濾波器，鈮酸鋰SAW濾波器的中心頻率為426.7 MHz，而AlN基SAW 濾
    126900
    limit2021-04-29 12:20
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