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基于納米壓印全生態(tài)產(chǎn)業(yè)平臺的微納光學器件制造Manufacturing of Micro and Nano Optical Devices Based on Nanoimprint Eco-industrial Platform羅剛材料科學姑蘇實驗室研究員、蘇州新維度微納科技有限公司創(chuàng)始人LUO GangProfessor of Gusu Lab, Founderof NDnano

Micro-led研究進展及在光醫(yī)療領(lǐng)域的應用展望The Research Progress of Micro-led and its Application Prospect in the Field of Optical Medicine呂金光中國科學院長春光學精密機械與物理研究所研究員LV JinguangProfessorof Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

光學技術(shù)糖足微循環(huán)監(jiān)測與干預應用研究Application of Optical Technology in Monitoring and Intervention of Glucose Microcirculation崔錦江中國科學院蘇州生物醫(yī)學工程技術(shù)研究所康復與治療研究室主任、研究員CUI JinjiangDirector and Professor Rehabilitation and Treatment Laboratory, Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences

硅襯底GaN基光電材料外延生長Epitaxial Growth of GaN Based Photoelectric Materials on Silicon Substrate孫錢中國科學院蘇州納米技術(shù)與納米仿生研究所研究員SUN QianProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

氨熱法氮化鎵單晶生長研究進展及面臨的挑戰(zhàn)Progress and Challenges in Bulk GaN Crystal Growth by Ammonothermal Method任國強中國科學院蘇州納米技術(shù)與納米仿生研究所、研究員REN GuoqiangProfessorof Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences

基于液態(tài)金屬打印和飛秒激光照射的高性能原子薄Ga2O3氣體傳感器High-Performance atomically thin Ga2O3Gas Sensors via Liquid Metal Printing and Femtosecond Laser Irradiation徐承龍皇家墨爾本大學微納研究院研究員XU ChenglongProfessor of Micro Nano Research Facility, STEM College, RMIT University

電流/功率截止頻率為135/310 GHz的高性能硅基InAlN/GaN HEMTsHigh-Performance InAlN/GaN HEMTs on Silicon Substrate with fT/fmax of 135/310 GHz 崔鵬山東大學新一代半導體材料研究院研究員CUIPengResearch Fellow of the Institute of Novel Semiconductor of Shandong University

功率HEMT的p-GaN柵極可靠性及其加固方法GaN Gate Reliability and Its Reinforcement Techniques in Power HEMTs鐘耀宗中國科學院蘇州納米技術(shù)與納米仿生研究所助理研究員ZHONG YaozongAssistant Professor of Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences

AlGaN/GaN HEMT能帶工程和界面調(diào)制AlGaN/GaN HEMT energy band engineering and interface modulation胡衛(wèi)國中國科學院北京納米能源與系統(tǒng)研究所研究員HU WeiguoProfessor of Beijing Institute of Nanoenergy and Systems, Chinese Academy of Sciences

異質(zhì)集成氮化鎵功率模塊的量產(chǎn)制造工藝研究A Fabrication Process for Heterogeneous Integrated GaN Power Modules王文博甬江實驗室研究員WANG WenboProfessor of Yongjiang Laboratory (Y-Lab)

全色顯示材料與3D芯片集成技術(shù)Integrated technology of panchromatic display materials and 3D chips范謙東南大學下一代半導體材料研究所研究員

4H-SiC MOSFET中界面碳團簇的形成和遷移率退化機理Interfacial Carbon Cluster Formation and Mobility Degradation in 4H-SiC MOSFETs張召富武漢大學工業(yè)科學研究院研究員ZHANG ZhaofuProfessor of The Institute of Technological Sciences, Wuhan University

比電阻3.3毫歐.平方厘米的1200伏14毫歐SiC MOSFET1200V 14mohm SiC MOSFET with Rsp,on of 3.3mohm.cm^2雷光寅復旦大學副研究員LEI GuangyinAssociate Professor of Fudan University

1200V SiC MOSFET抗輻射可靠性研究Investigation of 1200V SiC MOSFET Radiation Ruggedness任娜浙江大學特聘研究員REN NaProfessor of Zhejiang University

光健康與近視防護黃昌兵中國科學院心理研究所研究員HUANGChangbingProfessor of InstituteofPsychology,CAS

氮化鎵基激光器和超輻射管研究進展Progress of GaN based laser diodes and superluminescene diodes劉建平中國科學院蘇州納米技術(shù)與納米仿生研究所納米器件研究部 研究員LIU JianpingProfessor of Nanodevice Research Department of Suzhou Institute of Nanotechnology and Nanobionics, Chinese Academy of Sciences

基于藍光半導體激光器的新器件：SWOT分析New devices based on blue laser diodes: SWOT analysis.Mike LESZCZYNSKI波蘭高壓物理研究所研究員Mike LESZCZYNSKIProfessor of Institute of High Pressure Physics, Poland

微米級氧化鎵厚膜的載流子定向輸運與深紫外光電探測Directional carrier transport in micrometer-thick gallium oxide films for high-performance deep-ultraviolet photodetection張文瑞中科院寧波材料所研究員Zhang WenruiProfessor Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences

氮化物的范德華外延：基底結(jié)構(gòu)、多性能控制和紫外光電器件應用Van der Waals Epitaxy of Nitrides: Substrate Construction, Multi-Properties Control and Ultraviolet Optoelectronic Device Application孫曉娟中科院長春光機所研究員SUN XiaojuanProfessor of Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

超寬禁帶六方氮化硼二維原子晶體及其光電器件Growth of ultra-wide band-gap two-dimensional hexagonal boron nitride for optoelectronic devices張興旺中國科學院半導體所研究員ZHANG XingwangProfessor of Institute of Semiconductors, Chinese Academy of Sciences